| PART |
Description |
Maker |
| X2816AM |
2048 x 8-Bit / Electrically EPROM
ELECTRICALLY ERASABLE PROM
|
Xicor Inc.
|
| BR24L02-W BR24L02F-W BR24L02FJ-W BR24L02FV-W BR24L |
256x8 bit electrically erasable PROM 256x8位电可擦除可编程ROM
256×8 bit electrically erasable PROM
256?8 bit electrically erasable PROM
|
Rohm Co., Ltd.
Rohm CO.,LTD.
|
| IM5603 IM5623 |
ELECTRICALLY PROGRAMMABLE 1024 BIT BIPOLAR READ ONLY MEMORY 1024位电可编程只读存储器双极
(IM5603 / IM5623) ELECTRICALLY PROGRAMMABLE 1024 BIT BIPOLAR READ ONLY MEMORY
|
Intersil, Corp.
Intersil Corporation
|
| IS25C08-2PI |
8K-BIT/16K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
|
INTEGRATED SILICON SOLUTION INC
|
| M5L27128K M5L27128K-2 |
131 072-BIT(16384-WORD BY 8-BIT) ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
|
Mitsubishi Electric Semiconductor
|
| 24C16B |
Note:This product is not recommended for new designs. Please consider 24LC16B instead.The 24C16B is an 8K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit with an I2C™ compatible 2-wire serial
|
Microchip
|
| M58653P |
700 BIT ELECTRICALLY ALTERABLE ROM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| AM2864AE |
8192 x 8-Bit Electrically Erasable PROM
|
AMD
|
| BR24L08-W07 |
1024×8 bit electrically erasable PROM
|
Rohm
|
| BR24L08-W07 BR24L08F-W BR24L08FJ-W BR24L08FV-W BR2 |
1024】8 bit electrically erasable PROM
|
Rohm
|
| BR24L04FVM-W BR24L04-W |
512×8 bit electrically erasable PROM
|
Rohm
|
